all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 10 rev. 02.1, 2016-06-22 pxac241702fc pxac241702fc package h-37248-4 thermally-enhanced high power rf ldmos fet 150 w, 28 v, 2300 C 2400 mhz features ? asymmetrical doherty design - main: p 1db = 60 w typ - peak: p 1db = 90 w typ ? broadband internal input and output matching ? typical pulsed cw performance, 2350 mhz, 28 v, doherty configuration - output power at p 1db = 100 w - efficiency = 49% - gain = 17.5 db ? integrated esd protection: human body model, class 1c (per jesd22-a114) ? capable of handling 10:1 vswr @28 v, 120 w (cw) output power ? low thermal resistance ? pb-free and rohs compliant description the pxac241702fc is a 28 v ldmos fet with an asym metrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 mhz frequency band. features in - clude dual-path design, high gain and thermally-enhanced package with earless flange. manufactured with infineon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. rf characteristics single-carrier wcdma specifications (tested in infineon doherty test fixture) v dd = 28 v, i dq(main) = 360 ma, v gs(peak) = 1.2 v, p out = 28 w avg, ? = 2400 mhz. 3gpp signal, 3.84 mhz channel bandwidth, 10 db peak/average @ 0.01% probability on ccdf. characteristic symbol min typ max unit gain g ps 15.5 16.5 db drain effciency h d 46 52 % adjacent channel power ratio acpr C33.5 C28.0 dbc output par (at 0.01% probability on ccdf) opar 6.5 7.5 db -75 -50 -25 0 25 50 75 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 360 ma, ? = 2300 mhz 3gpp wcdma signal, 10 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c241702fc-gr1a
pxac241702fc data sheet 2 of 10 rev. 02.1, 2016-06-22 dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.19 w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.16 w operating gate voltage (main) v ds = 28 v, i dq = 360 ma v gs 2.3 2.65 3.0 v (peak) v ds = 28 v, i dq = 0 ma v gs 0.8 1.30 1.8 v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, 100 w cw) r qjc 0.53 c/w ordering information type and version order code package and description shipping pxac241702fc v1 r0 pxac241702fcv1r0xtma1 h-37248-4, ceramic open-cavity, push-pull, earless tape & reel, 50 pcs pxac241702fc v1 r250 PXAC241702FCV1R250xtma1 h-37248-4, ceramic open-cavity, push-pull, earless tape & reel, 250 pcs
data sheet 3 of 10 rev. 02.1, 2016-06-22 pxac241702fc -75 -50 -25 0 25 50 75 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 360 ma, ? = 2350 mhz 3gpp wcdma signal, 10 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c241702fc-gr1b -75 -50 -25 0 25 50 75 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 360 ma, ? = 2400 mhz 3gpp wcdma signal, 10 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c241702fc-gr1c 0 10 20 30 40 50 60 70 -70 -60 -50 -40 -30 -20 -10 0 30 35 40 45 50 55 60 drain efficiency(%) acp up & low (dbc) average output power (dbm) single-carrier wcdma 3gpp drive-up v dd = 28 v, i dq = 360 ma, ? = 2300-2400 mhz, 3gpp wcdma signal, 10 db par, 3.84 mhz bandwidth 2300 acpl 2350 acpl 2400 acpl 2300 acpu 2350 acpu 2400 acpu 2300 eff 2350 eff 2400 eff c241702fc-gr2 0 10 20 30 40 50 60 12 14 16 18 20 22 24 2150 2250 2350 2450 2550 drain efficiency (%) gain (db) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 360 ma, p out = 44.47 dbm, 3gpp wcdma signal, 10 db par efficienc y gain c241702fc-gr3 typical performance (data taken in an infineon production test fixture)
pxac241702fc data sheet 4 of 10 rev. 02.1, 2016-06-22 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) power gain (db) output power (dbm) cw performance at selected supply voltages i dq = 360 ma, ? = 2300 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v c241702fc-gr6a 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) power gain (db) output power (dbm) cw performance at selected supply voltages i dq = 360 ma, ? = 2350 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v c241702fc-gr6b 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) power gain (db) output power (dbm) cw performance at selected suply voltages i dq = 360 ma, ? = 2400 mhz gain efficienc y v dd = 24 v v dd = 28 v v dd = 32 v c241702fc-gr6c 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 25 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 360ma efficienc y gain c241702fc-gr5 2300 mhz 2350 mhz 2400 mhz typical performance (cont.)
data sheet 5 of 10 rev. 02.1, 2016-06-22 pxac241702fc -25 -20 -15 -10 -5 0 0 5 10 15 20 25 2200 2300 2400 2500 input return loss (db) power gain (db) frequency (mhz) cw performance, single side small signal gain & input return loss, v dd = 28 v, i dq = 360 ma irl gain c241702fc-gr7 see next page for load pull performance typical performance (cont.)
pxac241702fc data sheet 6 of 10 rev. 02.1, 2016-06-22 load pull performance z source z loa d s g1 g2 d1 d2 reference circuit, 2300 mhz to 2400 mhz dut pxac241702fc v1 reference circuit part no. lta/pxac241702fc v1 pcb rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66 find gerber files for this reference circuit on the infineon web site at www.infineon.com/rfpower main side pulsed cw signal: 160 sec, 10% duty cycle; 28 v, 360 ma p 1db class ab max output power max efficiency freq [mhz] zin [ w ] gain [db] pae [%] p out [dbm] p out [w] zo [ w ] gain [db] pae [%] p out [dbm] p out [w] zo [ w ] 2300 7.02 C j16.25 18.46 48.25 48.26 66.99 3.70 C j5.99 21.09 60.29 46.10 40.78 7.31 C j2.51 2350 8.74 C j17.99 18.55 51.07 48.10 64.57 3.95 C j6.20 21.35 58.44 45.56 35.96 6.07 C j1.30 2400 12.84 C j19.05 18.51 49.06 47.87 61.24 4.07 C j6.49 21.28 58.55 45.90 38.91 5.53 C j1.93 peak side pulsed cw signal: 160 sec, 10% duty cycle; 28 v, 540 ma p 1db class ab max output power max efficiency freq [mhz] zin [ w ] gain [db] pae [%] p out [dbm] p out [w] zo [ w ] gain [db] pae [%] p out [dbm] p out [w] zo [ w ] 2300 6.20 C j13.36 17.67 52.03 50.03 100.69 2.61 C j6.18 19.73 59.11 48.52 71.07 4.52 C j4.62 2350 8.28 C j12.82 17.83 50.54 49.84 96.38 2.65 C j6.19 19.83 56.93 48.23 66.48 4.23 C j4.25 2400 10.47 C j14.25 17.66 49.75 49.77 94.84 2.52 C j6.34 20.75 56.70 47.17 52.14 4.10 C j2.69 peak side pulsed cw signal: 160 sec, 10% duty cycle; 28 v, v g = 1.5 v p 1db class c max output power max efficiency freq [mhz] zin [ w ] gain [db] pae [%] p out [dbm] p out [w] zo [ w ] gain [db] pae [%] p out [dbm] p out [w] zo [ w ] 2300 6.20 C j13.36 14.18 58.22 50.38 109.14 2.47 C j5.92 15.13 64.64 48.83 76.42 4.33 C j4.75 2350 8.28 C j12.82 13.92 55.03 50.16 103.75 2.45 C j6.22 14.84 61.91 49.20 83.25 3.70 C j5.15 2400 10.47 C j14.25 14.08 53.80 50.08 101.86 2.31 C j6.36 15.19 60.42 47.54 56.77 4.17 C j3.00
data sheet 7 of 10 rev. 02.1, 2016-06-22 pxac241702fc reference circuit assembly diagram (not to scale) component information component description manufacturer p/n input c101, c104, c105, c106 capiacitor, 15 pf atc 600f150jt250 c102, c107 capiacitor, 10 f taiyo yuden umk325c7106mm-t c103 capiacitor, 0.3 pf atc 600f0r3bt250 r101, r102 chip resistor, 10 ohms panasonic electronic components erj-8geyj101v r103 chip resistor, 50 ohms anaren c16a50z4 u1 coupler anaren x3c25p1-02s output c201, c209, c211 capiacitor, 15 pf atc 600f150jt250 c202, c203, c204, c212, c213, c214 capiacitor, 10 f taiyo yuden umk325c7106mm-t c205, c215 capiacitor, 220 f, 50 v cornell dubilier electronics (cde) sk221m050st c206 capiacitor, 0.6 pf atc 600f0r6bt250 c207 capiacitor, 4.7 pf atc 600f4r7bt250 c208, c210 capiacitor, 1.2 pf atc 600f 1r2bt250 reference circuit (cont.) rf_in rf_out p x a c 2 4 1 7 0 2 f c _ c d _ 8 - 2 5 - 1 4 (61) pxac241702fc_out_01 ro4350, .020 pxac241702fc_in_01 ro4350, .020 v dd c202 c203 c204 c201 r101 c102 r103 c101 c205 c103 v dd c206 c209 c210 c211 c212 c213 c214 c208 c106 c105 c107 c215 r102 u1 c104 pxac241702fc c207
pxac241702fc data sheet 8 of 10 rev. 02.1, 2016-06-22 pinout diagram (top view) lead connections for pxac241702fc see next page for package mechanical specifications h - 37248 - 4 __do _pd _10 - 10 - 2012 s d1 d2 g1 g2 main peak main peak pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (flange)
data sheet 9 of 10 rev. 02.1, 2016-06-22 pxac241702fc package outline specifications package h-37248-4 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a - diagram notesunless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005]. 4. pins: d1, d2 C drain, g1, g2 C gate, s (flange) C source. 5. lead thickness: 0.10 +0.076/C0.025 [.004 +.003/C.001]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. find the latest and most complete information tabout products and packaging at the infineon internet page www.infineon.com/rfpower
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